WNSC021200Q

Obsolete

WeEn Semiconductors

DIODE SIL CARB 1.2KV 2A TO220AC

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Obsolete

WeEn Semiconductors

DIODE SIL CARB 1.2KV 2A TO220AC

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	WNSC021200Q	WNSC0 Series

Capacitance @ Vr, F	109 pF	109 - 250 pF
Current - Average Rectified (Io)	2 A	2 - 5 A
Current - Reverse Leakage @ Vr	20 µA	20 - 50 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 °C	175 °C
Package / Case	TO-220-2	TO-220-2
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-220AC	TO-220AC
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V	1.6 V

DIODE SIL CARB 1.2KV 2A TO220AC

Part	Operating Temperature - Junction [Max]	Speed	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)
WeEn Semiconductors WNSC021200Q	175 °C	No Recovery Time	TO-220AC	1.6 V	1.2 kV	0 ns	20 µA	Through Hole	SiC (Silicon Carbide) Schottky	109 pF	TO-220-2	2 A
WeEn Semiconductors WNSC051200Q	175 °C	No Recovery Time	TO-220AC	1.6 V	1.2 kV	0 ns	50 µA	Through Hole	SiC (Silicon Carbide) Schottky	250 pF	TO-220-2	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 2A Through Hole TO-220AC

Technical documentation and resources

No documents available