AIHD15N60RFATMA1

Obsolete

Infineon Technologies

IC DISCRETE 600V TO252-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC DISCRETE 600V TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	AIHD15N60RFATMA1

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	45 A
Gate Charge	90 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	240 W
Supplier Device Package	PG-TO252-3-313
Switching Energy	270 µJ, 250 µJ
Td (on/off) @ 25°C	160 ns, 13 ns
Test Condition	15 Ohm, 400 V, 15 V, 15 A
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Vce(on) (Max) @ Vge, Ic	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Power - Max [Max]	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Mounting Type	Test Condition	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge
Infineon Technologies AIHD15N60RFATMA1	2.5 V	250 µJ 270 µJ	600 V	Trench Field Stop	240 W	13 ns 160 ns	45 A	Surface Mount	15 Ohm 15 V 15 A 400 V	30 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	-40 C	175 °C	PG-TO252-3-313	90 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Trench Field Stop 600 V 30 A 240 W Surface Mount PG-TO252-3-313

Technical documentation and resources

No documents available