STP77N6F6

Obsolete

STMicroelectronics

MOSFET N-CH 60V 77A TO220

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Obsolete

STMicroelectronics

MOSFET N-CH 60V 77A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	STP77N6F6

Current - Continuous Drain (Id) @ 25°C	77 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	76 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology
STMicroelectronics STP77N6F6	TO-220	80 W	5300 pF	60 V	20 V	N-Channel	7 mOhm	77 A	Through Hole	TO-220-3	76 nC	10 V	-55 °C	175 ░C	4 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 77A (Tc) 80W (Tc) Through Hole TO-220

Technical documentation and resources