BCR22PNE6433HTMA1

Obsolete

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

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Obsolete

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BCR22PNE6433HTMA1

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	PG-SOT363-PO
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Frequency - Transition	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Emitter Base (R2)	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case
Infineon Technologies BCR22PNE6433HTMA1	130 MHz	1 NPN 1 PNP	300 mV	22 kOhms	Surface Mount	PG-SOT363-PO	100 mA	50 V	22 kOhms	250 mW	50	6-VSSOP SC-88 SOT-363
Infineon Technologies BCR22PNH6433XTMA1	130 MHz	1 NPN 1 PNP	300 mV	22 kOhms	Surface Mount	PG-SOT363-PO	100 mA	50 V	22 kOhms	250 mW	50	6-VSSOP SC-88 SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-PO

Technical documentation and resources

No documents available