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IDM02G120C5XTMA1 - INFINEON IDM02G120C5XTMA1

IDM02G120C5XTMA1

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, THINQ SERIES, SINGLE, 1.2 KV, 14 A, 14 NC, TO-252 (DPAK)

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IDM02G120C5XTMA1 - INFINEON IDM02G120C5XTMA1

IDM02G120C5XTMA1

Active
Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, THINQ SERIES, SINGLE, 1.2 KV, 14 A, 14 NC, TO-252 (DPAK)

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIDM02G120C5XTMA1
Capacitance @ Vr, F182 pF
Current - Average Rectified (Io)2 A
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackagePG-TO252-2
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.04
10$ 1.97
100$ 1.36
500$ 1.10
1000$ 1.02
Digi-Reel® 1$ 3.04
10$ 1.97
100$ 1.36
500$ 1.10
1000$ 1.02
Tape & Reel (TR) 2500$ 0.93
5000$ 0.92
NewarkEach (Supplied on Cut Tape) 1$ 1.60
10$ 1.24
25$ 1.12
50$ 1.01
100$ 0.89
250$ 0.82
500$ 0.81
1000$ 0.68

Description

General part information

IDM02G120 Series

TheCoolSiC™ Schottky diodegeneration 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Documents

Technical documentation and resources