IXKF40N60SCD1

Obsolete

IXYS

MOSFET N-CH 600V 41A I4PAC

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Obsolete

IXYS

MOSFET N-CH 600V 41A I4PAC

Technical Specifications

Parameters and characteristics for this part

Specification	IXKF40N60SCD1

Current - Continuous Drain (Id) @ 25°C	41 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	i4-Pac™-5 (3 Leads)
Rds On (Max) @ Id, Vgs [Max]	70 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]
IXYS IXKF40N60SCD1	41 A	20 V	MOSFET (Metal Oxide)	i4-Pac™-5 (3 Leads)	N-Channel	10 V	ISOPLUS i4-PAC™	3.9 V	600 V	150 °C	-40 °C	Through Hole	70 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 41A (Tc) Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available