IXTP7N60PM

Obsolete

IXYS

MOSFET N-CH 600V 4A TO220AB

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Obsolete

IXYS

MOSFET N-CH 600V 4A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP7N60PM

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	41 W
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [x]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type
IXYS IXTP7N60PM	MOSFET (Metal Oxide)	5.5 V	20 nC	30 V	10 V	-55 °C	150 °C	TO-220-3	41 W	600 V	TO-220-3	Through Hole	4 A	1.1 Ohm	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 4A (Tc) 41W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available