STB40NF10LT4

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 40 A, 100 V, 0.028 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES

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STB40NF10LT4

Active

STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 40 A, 100 V, 0.028 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES

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Description Specifications Series Pricing CAD Documents

Description

General part information

STB40NF10L Series

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

Technical Specifications

Parameters and characteristics for this part

Specification	STB40NF10LT4

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	64 nC
Input Capacitance (Ciss) (Max)	2300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-65 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	150 W
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max)	2.5 V

STB40NF10L Series

N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STripFET MOSFET

Part	Package / Case	Gate Charge (Max)	Package Name	Technology	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)
STMicroelectronics STB40NF10LT4	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	64 nC	D2PAK	MOSFET (Metal Oxide)	N-Channel	150 W	2300 pF	33 mOhm	10 V	5 V	Surface Mount	40 A	15 V	100 V	-65 °C	175 °C	2.5 V