STI12NM50N

Obsolete

STMicroelectronics

MOSFET N-CH 500V 11A I2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 500V 11A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STI12NM50N

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	940 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case
STMicroelectronics STI12NM50N	100 W	500 V	N-Channel	I2PAK	MOSFET (Metal Oxide)	25 V	940 pF	10 V	-55 °C	150 °C	Through Hole	11 A	30 nC	4 V	380 mOhm	I2PAK TO-262-3 Long Leads TO-262AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 11A (Tc) 100W (Tc) Through Hole I2PAK

Technical documentation and resources