
BSO220N03MDGXUMA1
ActiveOPTIMOS™ POWER MOSFET 20 V ; SO-8 PACKAGE; 110 MOHM;
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BSO220N03MDGXUMA1
ActiveOPTIMOS™ POWER MOSFET 20 V ; SO-8 PACKAGE; 110 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSO220N03MDGXUMA1 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1.4 W |
| Rds On (Max) @ Id, Vgs | 22 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSO220 Series
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Documents
Technical documentation and resources