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BSO220N03MDGXUMA1 - null

BSO220N03MDGXUMA1

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Infineon Technologies

OPTIMOS™ POWER MOSFET 20 V ; SO-8 PACKAGE; 110 MOHM;

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Search across all available documentation for this part.

DocumentsDatasheet
BSO220N03MDGXUMA1 - null

BSO220N03MDGXUMA1

Active
Infineon Technologies

OPTIMOS™ POWER MOSFET 20 V ; SO-8 PACKAGE; 110 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSO220N03MDGXUMA1
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs10 nC
Input Capacitance (Ciss) (Max) @ Vds800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]1.4 W
Rds On (Max) @ Id, Vgs22 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.89
10$ 0.77
100$ 0.53
500$ 0.45
1000$ 0.38
Digi-Reel® 1$ 0.89
10$ 0.77
100$ 0.53
500$ 0.45
1000$ 0.38
Tape & Reel (TR) 2500$ 0.34
5000$ 0.32
12500$ 0.30
25000$ 0.29
NewarkEach (Supplied on Full Reel) 2500$ 0.30
5000$ 0.29
10000$ 0.28

Description

General part information

BSO220 Series

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Documents

Technical documentation and resources