ESGLW RVG

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Taiwan Semiconductor Corporation

DIODE GP 400V 800MA SOD123W

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Taiwan Semiconductor Corporation

DIODE GP 400V 800MA SOD123W

Technical Specifications

Parameters and characteristics for this part

Specification	ESGLW RVG

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	800 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-123W
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123W
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Mounting Type	Reverse Recovery Time (trr)	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Grade	Qualification
Taiwan Semiconductor Corporation ESGLW RVG	Surface Mount	35 ns	200 mA 500 ns	1 µA	1.3 V	150 °C	-55 °C	20 pF	SOD-123W	800 mA	400 V	Standard	SOD-123W
Taiwan Semiconductor Corporation ESGLWHRVG	Surface Mount	35 ns	200 mA 500 ns	1 µA	1.3 V	150 °C	-55 °C	20 pF	SOD-123W	800 mA	400 V	Standard	SOD-123W	Automotive	AEC-Q101
Taiwan Semiconductor Corporation ESGLWH	Surface Mount	35 ns	200 mA 500 ns	1 µA	1.3 V	150 °C	-55 °C	20 pF	SOD-123W	800 mA	400 V	Standard	SOD-123W	Automotive	AEC-Q101

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General part information

Diode 400 V 800mA Surface Mount SOD-123W

Technical documentation and resources

No documents available