CMUDM8001 TR PBFREE

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Central Semiconductor Corp

MOSFET P-CH 20V 100MA SOT523

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Central Semiconductor Corp

MOSFET P-CH 20V 100MA SOT523

Technical Specifications

Parameters and characteristics for this part

Specification	CMUDM8001 TR PBFREE

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	0.66 nC
Input Capacitance (Ciss) (Max) @ Vds	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SOT-523
Power Dissipation (Max) [Max]	250 mW
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs(th) (Max) @ Id	1.1 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs (Max) [Max]
Central Semiconductor Corp CMUDM8001 TR PBFREE	1.1 V	45 pF	SOT-523	8 Ohm	SOT-523	250 mW	150 °C	-65 °C	P-Channel	100 mA	20 V	Surface Mount	MOSFET (Metal Oxide)	0.66 nC	4 V	1.5 V	10 V

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General part information

P-Channel 20 V 100mA (Ta) 250mW (Ta) Surface Mount SOT-523

Technical documentation and resources