IXFV14N80P

Obsolete

IXYS

MOSFET N-CH 800V 14A PLUS220

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Obsolete

IXYS

MOSFET N-CH 800V 14A PLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFV14N80P

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds	3900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	720 mOhm
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type
IXYS IXFV14N80P	14 A	720 mOhm	61 nC	30 V	-55 °C	150 °C	TO-220-3 Short Tab	Through Hole	400 W	PLUS220	5.5 V	3900 pF	800 V	10 V	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 14A (Tc) 400W (Tc) Through Hole PLUS220

Technical documentation and resources