GT8G133(TE12L,Q)

Obsolete

Toshiba Semiconductor and Storage

IGBT 400V 600MW 8TSSOP

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Obsolete

Toshiba Semiconductor and Storage

IGBT 400V 600MW 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	GT8G133(TE12L,Q)

Current - Collector Pulsed (Icm)	150 A
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	600 mW
Supplier Device Package	8-TSSOP
Td (on/off) @ 25°C	2 µs, 1.7 µs
Vce(on) (Max) @ Vge, Ic	2.9 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Operating Temperature	Supplier Device Package	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Pulsed (Icm)	Mounting Type	Package / Case	Package / Case [custom]	Package / Case [custom]
Toshiba Semiconductor and Storage GT8G133(TE12L,Q)	600 mW	2.9 V	150 °C	8-TSSOP	1.7 µs 2 µs	400 V	150 A	Surface Mount	8-TSSOP	0.173 "	4.4 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 400 V 600 mW Surface Mount 8-TSSOP

Technical documentation and resources