DXT651-13

Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 3A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, GREEN, PLASTIC PACKAGE-3

Search across all available documentation for this part.

Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 3A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, GREEN, PLASTIC PACKAGE-3

Technical Specifications

Parameters and characteristics for this part

Specification	DXT651-13

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	1 W
Supplier Device Package	SOT-89-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

NPN, 60V, 3A, SOT89

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Frequency - Transition	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]
Diodes Inc DXT651Q-13	-55 °C	150 °C	Surface Mount	AEC-Q101	100	Automotive	140 MHz	NPN	SOT-89-3	3 A	60 V	100 nA	TO-243AA	600 mV	1 W
Diodes Inc DXT651-13	-55 °C	150 °C	Surface Mount		100		200 MHz	NPN	SOT-89-3	3 A	60 V	100 nA	TO-243AA	600 mV	1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.