IXFX210N17T

Obsolete

IXYS

MOSFET N-CH 170V 210A PLUS247-3

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Obsolete

IXYS

MOSFET N-CH 170V 210A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX210N17T

Current - Continuous Drain (Id) @ 25°C	210 A
Drain to Source Voltage (Vdss)	170 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	285 nC
Input Capacitance (Ciss) (Max) @ Vds	18800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1150 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
IXYS IXFX210N17T	20 V	1150 W	7.5 mOhm	N-Channel	PLUS247™-3	Through Hole	10 V	18800 pF	-55 °C	175 ░C	MOSFET (Metal Oxide)	5 V	285 nC	TO-247-3 Variant	170 V	210 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 170 V 210A (Tc) 1150W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

No documents available