IXTA50N20P

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IXYS

MOSFET N-CH 200V 50A TO263

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IXYS

MOSFET N-CH 200V 50A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA50N20P

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2720 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
IXYS IXTA50N20P	N-Channel	50 A	10 V	70 nC	MOSFET (Metal Oxide)	200 V	Surface Mount	20 V	60 mOhm	TO-263AA	360 W	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2720 pF	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 50A (Tc) 360W (Tc) Surface Mount TO-263AA

Technical documentation and resources