Specification	PJQ5850_R2_00001

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	5 A
Current - Continuous Drain (Id) (Tc)	14 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Max)	4.4 nC, 4.4 nC
Input Capacitance (Ciss) (Max)	425 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	DFN5060B-8
Power - Max (Ta)	1.7 W
Power - Max (Tc)	12 W
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

PJQ5850 Series

Part	Technology	Package Name	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Power - Max (Tc)	Power - Max (Ta)	Package / Case	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Channel Count	Configuration	Configuration - Features	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Grade	Qualification
Panjit International Inc. PJQ5850_R2_00001	MOSFET (Metal Oxide)	DFN5060B-8	2.5 V	425 pF	40 V	33 mOhm	12 W	1.7 W	8-PowerTDFN	4.4 nC 4.4 nC	-55 °C	150 °C	Surface Mount	2	N-Channel	Dual	5 A	14 A
Panjit International Inc. PJQ5850-AU_R2_000A1	MOSFET (Metal Oxide)	DFN5060B-8	2.5 V	425 pF	40 V	33 mOhm	14.4 W	2 W	8-PowerTDFN	4.4 nC 4.4 nC	-55 °C	175 °C	Surface Mount	2	N-Channel	Dual	5 A	14 A	Automotive	AEC-Q101

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