IPB085N06L G

Obsolete

Infineon Technologies

MOSFET N-CH 60V 80A TO-263

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 80A TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	IPB085N06L G

Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3500 pF
Mounting Type	Surface Mount
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs [Max]	8.2 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Technology	FET Type	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPB085N06L G	Surface Mount	60 V	MOSFET (Metal Oxide)	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	PG-TO263-3-2	8.2 mOhm	2 V	104 nC	3500 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 80A (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources