SPU11N10

Obsolete

Infineon Technologies

MOSFET N-CH 100V 10.5A TO251-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 10.5A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPU11N10

Current - Continuous Drain (Id) @ 25°C	10.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18.3 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	P-TO251-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Supplier Device Package
Infineon Technologies SPU11N10	IPAK TO-251-3 Short Leads TO-251AA	10 V	-55 °C	175 ░C	50 W	100 V	MOSFET (Metal Oxide)	10.5 A	20 V	18.3 nC	4 V	170 mOhm	400 pF	N-Channel	Through Hole	P-TO251-3-1

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 10.5A (Tc) 50W (Tc) Through Hole P-TO251-3-1

Technical documentation and resources