SSM3K344R,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3A SOT23F

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3A SOT23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K344R,LF

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC
Input Capacitance (Ciss) (Max) @ Vds	153 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	71 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature	Technology
Toshiba Semiconductor and Storage SSM3K344R,LF	1.5 V 4.5 V	N-Channel	153 pF	1 W	71 mOhm	2 nC	SOT-23-3 Flat Leads	20 V	SOT-23F	8 V	3 A	Surface Mount	1 V	150 °C	MOSFET (Metal Oxide)

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General part information

N-Channel 20 V 3A (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources

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