ZXM62P02E6TA

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.3A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-23, 6 PIN

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Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.3A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-23, 6 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZXM62P02E6TA

Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.8 nC
Input Capacitance (Ciss) (Max) @ Vds	320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	700 mV

P-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Technology
Diodes Inc ZXM62P02E6TA	200 mOhm	20 V	P-Channel	1.1 W	2.3 A	320 pF	-55 °C	150 °C	SOT-23-6	5.8 nC	SOT-23-6	12 V	700 mV	4.5 V	2.7 V	Surface Mount	MOSFET (Metal Oxide)

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General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources