RD3T100CNTL1
ActiveRohm Semiconductor
MOSFET, N-CH, 200V, 10A, 150DEG C, 85W ROHS COMPLIANT: YES
RD3T100CNTL1
ActiveRohm Semiconductor
MOSFET, N-CH, 200V, 10A, 150DEG C, 85W ROHS COMPLIANT: YES
Description
General part information
RD3T100CN Series
RD3T100CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Technical Specifications
Parameters and characteristics for this part
| Specification | RD3T100CNTL1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 10 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 25 nC |
| Input Capacitance (Ciss) (Max) | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 85 W |
| Rds On (Max) | 182 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Anti-Whisker formation - Transistors
TO-252_TL1 Taping Information
Measurement Method and Usage of Thermal Resistance RthJC
Judgment Criteria of Thermal Evaluation
Calculation of Power Dissipation in Switching Circuit
RD3T100CN Data Sheet
Notes for Calculating Power Consumption:Static Operation
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
About Flammability of Materials
MOSFET Gate Drive Current Setting for Motor Driving
Condition of Soldering / Land Pattern Reference
Moisture Sensitivity Level - Transistors
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Types and Features of Transistors
Compliance of the RoHS directive
Method for Monitoring Switching Waveform
Package Dimensions
Impedance Characteristics of Bypass Capacitor
What Is Thermal Design
Notes for Temperature Measurement Using Forward Voltage of PN Junction
How to Use LTspice® Models
Report of SVHC under REACH Regulation
How to Use LTspice® Models: Tips for Improving Convergence
Basics of Thermal Resistance and Heat Dissipation
MOSFET Gate Resistor Setting for Motor Driving
Notes for Temperature Measurement Using Thermocouples
About Export Regulations
How to Create Symbols for PSpice Models
Part Explanation
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Temperature derating method for Safe Operating Area (SOA)
List of Transistor Package Thermal Resistance
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
PCB Layout Thermal Design Guide
Reliability Test Result
Precautions When Measuring the Rear of the Package with a Thermocouple
Two-Resistor Model for Thermal Simulation
RD3T100CN ESD Data
Importance of Probe Calibration When Measuring Power: Deskew
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
What is a Thermal Model? (Transistor)