IXYT55N120A4HV

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IXYS

IGBT PT 1200V 175A TO268HV

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IXYS

IGBT PT 1200V 175A TO268HV

Technical Specifications

Parameters and characteristics for this part

Specification	IXYT55N120A4HV

Current - Collector (Ic) (Max) [Max]	175 A
Current - Collector Pulsed (Icm)	350 A
Gate Charge	110 nC
IGBT Type	PT
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power - Max [Max]	650 W
Reverse Recovery Time (trr)	35 ns
Supplier Device Package	TO-268HV (IXYT)
Switching Energy	2.3 mJ, 5.3 mJ
Test Condition	15 V, 40 A, 600 V, 5 Ohm
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Switching Energy	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	IGBT Type	Gate Charge	Reverse Recovery Time (trr)	Test Condition	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Current - Collector Pulsed (Icm)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXYT55N120A4HV	2.3 mJ 5.3 mJ	1.8 V	650 W	PT	110 nC	35 ns	5 Ohm 15 V 40 A 600 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	1200 V	175 A	TO-268HV (IXYT)	350 A	Surface Mount	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 1200 V 175 A 650 W Surface Mount TO-268HV (IXYT)

Technical documentation and resources

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