TSM2308CX RFG

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 3A SOT23

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 3A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2308CX RFG

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.3 nC
Input Capacitance (Ciss) (Max) @ Vds	511 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.25 W
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Taiwan Semiconductor Corporation TSM2308CX RFG	2.5 V	3 A	Surface Mount	511 pF	4.5 V 10 V	N-Channel	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	SOT-23	1.25 W	20 V	4.3 nC	60 V

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General part information

N-Channel 60 V 3A (Ta) 1.25W (Ta) Surface Mount SOT-23

Technical documentation and resources

No documents available