MB85RS4 Series

Part	Memory Width	Memory Depth	Technology	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Memory Size	Package Length	Package Name	Package Width	Clock Frequency	Package / Case	Mounting Type	Memory Interface (Type)	Access Time	Memory Type	Operating Temperature (Max)	Operating Temperature (Min)	Memory Format
Fujitsu Semiconductor Memory Solution MB85RS4MLYPN-GS-AWEWE1	8 bit	512 K	FRAM (Ferroelectric RAM)	1.7 V	1.95 V	4 Mbit	5 mm	8-DFN	6 mm	50 MHz	8-VDFN Exposed Pad	Surface Mount	SPI	9 ns	Non-Volatile	125 °C	-40 °C	FRAM
Fujitsu Semiconductor Memory Solution MB85RS4MLYPF-G-BCERE1	8 bit	512 K	FRAM (Ferroelectric RAM)	1.7 V	1.95 V	4 Mbit	0.209 in	8-SOIC 8-SOP	5.3 mm	50 MHz		Surface Mount	SPI		Non-Volatile	125 °C	-40 °C	FRAM
Fujitsu Semiconductor Memory Solution MB85RS4MTYPN-GS-AWEWE1	8 bit	512 K	FRAM (Ferroelectric RAM)	1.8 V	3.6 V	4 Mbit	5 mm	8-DFN	6 mm	50 MHz	8-VDFN Exposed Pad	Surface Mount	SPI	9 ns	Non-Volatile	125 °C	-40 °C	FRAM
Fujitsu Semiconductor Memory Solution MB85RS4MTYPF-G-BCERE1	8 bit	512 K	FRAM (Ferroelectric RAM)	1.8 V	3.6 V	4 Mbit	0.209 in	8-SOIC 8-SOP	5.3 mm	50 MHz		Surface Mount	SPI		Non-Volatile	125 °C	-40 °C	FRAM
Fujitsu Semiconductor Memory Solution MB85RS4MTYPN-G-AWEWE1	8 bit	512 K	FRAM (Ferroelectric RAM)	1.8 V	3.6 V	4 Mbit	5 mm	8-DFN	6 mm	50 MHz	8-VDFN Exposed Pad	Surface Mount	SPI		Non-Volatile	125 °C	-40 °C	FRAM

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