STP180N10F3

Obsolete

STMicroelectronics

MOSFET N-CH 100V 120A TO220

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Obsolete

STMicroelectronics

MOSFET N-CH 100V 120A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	STP180N10F3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6665 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	315 W
Rds On (Max) @ Id, Vgs	5.1 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STP180N10F3	315 W	Through Hole	10 V	120 A	TO-220	6665 pF	N-Channel	100 V	4 V	20 V	MOSFET (Metal Oxide)	5.1 mOhm	-55 °C	175 ░C	TO-220-3
STMicroelectronics STP180N55F3		Through Hole	10 V	120 A	TO-220	6800 pF	N-Channel	55 V	4 V	20 V	MOSFET (Metal Oxide)		-55 °C	175 ░C	TO-220-3	3.8 mOhm	100 nC	330 W
STMicroelectronics STP180NS04ZC		Through Hole	10 V	120 A	TO-220		N-Channel			20 V	MOSFET (Metal Oxide)	4.2 mOhm	-55 °C	175 ░C	TO-220-3		110 nC	330 W	4560 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 120A (Tc) 315W (Tc) Through Hole TO-220

Technical documentation and resources

No documents available