
MJPE31CH-QZ
ActiveNexperia USA Inc.
100 V, 3 A NPN HIGH POWER BIPOLAR TRANSISTOR

MJPE31CH-QZ
ActiveNexperia USA Inc.
100 V, 3 A NPN HIGH POWER BIPOLAR TRANSISTOR
Description
General part information
MJPE31CH-Q Series
NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJPE31CH-QZ |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) | 120 |
| Frequency - Transition | 130 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Package Name | CFP15B |
| Power - Max | 1.6 W |
| Qualification | AEC-Q101 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
CFP15B; Reel pack for SMD, 13"; Q4/T2 product orientation
plastic, thermal enhanced ultra thin SMD package; 3leads; 2.13 mm pitch; 5.8 x 4.3 x 0.95 mm body
Evaluation of junction temperature and thermal stacks using the virtual junction
Reflow soldering profile
Wave soldering profile
RS2624_CFP15BSide