Specification	UPA1952TE-T1-A

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	1.8 V
Gate Charge (Max)	2.3 nC
Input Capacitance (Ciss) (Max)	272 pF, 272 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-95
Package Name	SC-95
Power - Max (Ta)	1.15 W
Rds On (Max)	135 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.5 V

UPA1952TE Series

Part	Channel Count	Configuration	Configuration - Features	Current - Continuous Drain (Id) (Ta)	Package Name	Input Capacitance (Ciss) (Max)	Mounting Type	Operating Temperature	Package / Case	Power - Max (Ta)	Technology	FET Feature	FET Feature Drive Voltage	Vgs(th) (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)
Renesas Electronics Corporation UPA1952TE-T1-A	2	P-Channel	Dual	2 A	SC-95	272 pF 272 pF	Surface Mount	150 °C	SC-95	1.15 W	MOSFET (Metal Oxide)	Logic Level Gate	1.8 V	1.5 V	135 mOhm	20 V	2.3 nC

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