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IPW60R037CSFDXKSA1

IPW60R037CSFDXKSA1

Active
INFINEON

COOLMOS™ CSFD N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 37 MOHM;

IPW60R037CSFDXKSA1

IPW60R037CSFDXKSA1

Active
INFINEON

COOLMOS™ CSFD N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 37 MOHM;

Description

General part information

IPW60R037 Series

IPW60R037CSFD CoolMOS™ superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behavior it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R037CSFDXKSA1
Current - Continuous Drain (Id) (Tc)54 A, 54 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)136 nC
Input Capacitance (Ciss) (Max)5623 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NamePG-TO247-3
Power Dissipation (Max)245 W
Rds On (Max)37 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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