
IPW60R037CSFDXKSA1
ActiveCOOLMOS™ CSFD N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 37 MOHM;

IPW60R037CSFDXKSA1
ActiveCOOLMOS™ CSFD N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 37 MOHM;
Description
General part information
IPW60R037 Series
IPW60R037CSFD CoolMOS™ superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behavior it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPW60R037CSFDXKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 54 A, 54 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 136 nC |
| Input Capacitance (Ciss) (Max) | 5623 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3 |
| Power Dissipation (Max) | 245 W |
| Rds On (Max) | 37 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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