Specification	SI7858ADP-T1-GE3

Current - Continuous Drain (Id) (Ta)	20 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	80 nC
Input Capacitance (Ciss) (Max)	5700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	2.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1.5 V

SI7858 Series

Part	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Gate Charge (Max)	Vgs(th) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI7858BDP-T1-GE3	Surface Mount	MOSFET (Metal Oxide)	12 V	5 W 48 W	4.5 V	1.8 V	N-Channel	5760 pF	2.5 mOhm	84 nC	1 V	PowerPAK® SO-8	40 A	-55 °C	150 °C	8 V	PowerPAK® SO-8
Vishay Dale SI7858ADP-T1-GE3	Surface Mount	MOSFET (Metal Oxide)	12 V	1.9 W	4.5 V	2.5 V	N-Channel	5700 pF	2.6 mOhm	80 nC	1.5 V	PowerPAK® SO-8		-55 °C	150 °C	8 V	PowerPAK® SO-8	20 A
Vishay Dale SI7858ADP-T1-E3	Surface Mount	MOSFET (Metal Oxide)	12 V	1.9 W	4.5 V	2.5 V	N-Channel	5700 pF	2.6 mOhm	80 nC	1.5 V	PowerPAK® SO-8		-55 °C	150 °C	8 V	PowerPAK® SO-8	20 A

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