Specification	IPA60R280CFD7XKSA1

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Input Capacitance (Ciss) (Max)	807 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	PG-TO220-FP
Power Dissipation (Max)	24 W
Rds On (Max)	280 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPA60R280 Series

Part	Vgs(th) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Technology	Package Name	Gate Charge (Max)	Package / Case	Mounting Type	Rds On (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IPA60R280P6XKSA1	4.5 V	20 V	600 V	1190 pF	32 W	MOSFET (Metal Oxide)	PG-TO220-FP	25.5 nC	TO-220-3 Full Pack	Through Hole	280 mOhm	N-Channel	13.8 A	10 V	-55 °C	150 °C
INFINEON IPA60R280CFD7XKSA1	4.5 V	20 V	650 V	807 pF	24 W	MOSFET (Metal Oxide)	PG-TO220-FP	18 nC	TO-220-3 Full Pack	Through Hole	280 mOhm	N-Channel	6 A	10 V	-55 °C	150 °C
INFINEON IPA60R280P7XKSA1	4 V	20 V	600 V	761 pF	24 W	MOSFET (Metal Oxide)	PG-TO220-FP	18 nC	TO-220-3 Full Pack	Through Hole	280 mOhm	N-Channel	12 A	10 V	-55 °C	150 °C

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