Specification	SI7116BDN-T1-GE3

Current - Continuous Drain (Id) (Ta)	18.4 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Max)	48 nC, 48 nC
Input Capacitance (Ciss) (Max)	1915 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	62.5 W, 5 W
Rds On (Max)	7.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SI7116 Series

Part	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Package Name	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Mounting Type	Technology	Gate Charge (Max)	Input Capacitance (Ciss) (Max)
Vishay Dale SI7116DN-T1-E3	20 V	N-Channel	40 V	1.5 W	PowerPAK® 1212-8	10 V	4.5 V	10.5 A	PowerPAK® 1212-8	7.8 mOhm	-55 °C	150 °C	2.5 V	Surface Mount	MOSFET (Metal Oxide)	23 nC
Vishay Dale SI7116DN-T1-GE3	20 V	N-Channel	40 V	1.5 W	PowerPAK® 1212-8	10 V	4.5 V	10.5 A	PowerPAK® 1212-8	7.8 mOhm	-55 °C	150 °C	2.5 V	Surface Mount	MOSFET (Metal Oxide)	23 nC
Vishay Dale SI7116BDN-T1-GE3	20 V	N-Channel	40 V	5 W 62.5 W	PowerPAK® 1212-8			18.4 A	PowerPAK® 1212-8	7.4 mOhm	-55 °C	150 °C	2.5 V	Surface Mount	MOSFET (Metal Oxide)	48 nC 48 nC	1915 pF

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