IXTQ102N20T

Obsolete

IXYS

MOSFET N-CH 200V 102A TO3P

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Obsolete

IXYS

MOSFET N-CH 200V 102A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ102N20T

Current - Continuous Drain (Id) @ 25°C	102 A
Drain to Source Voltage (Vdss)	200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	114 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	750 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)
IXYS IXTQ102N20T	114 nC	6800 pF	23 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	4.5 V	750 W	TO-3P	Through Hole	102 A	200 V	N-Channel	SC-65-3 TO-3P-3
IXYS IXTQ102N15T	87 nC	5220 pF		-55 °C	175 ░C	MOSFET (Metal Oxide)			TO-3P	Through Hole	102 A	150 V	N-Channel	SC-65-3 TO-3P-3	18 mOhm	10 V	455 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 102A (Tc) 750W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available