Specification	SI5448DU-T1-GE3

Current - Continuous Drain (Id) (Tc)	25 A, 25 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	1765 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Package Name	PowerPAK® ChipFet Single
Power Dissipation (Max)	31 W
Rds On (Max)	7.75 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.5 V

SI5448 Series

Part	Rds On (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Technology	Vgs (Max) Negative	Vgs (Max) Positive	Gate Charge (Max)
Vishay Dale SI5448DU-T1-GE3	7.75 mOhm	40 V	Surface Mount	-55 °C	150 °C	N-Channel	31 W	25 A 25 A	PowerPAK® ChipFET™ Single	10 V	4.5 V	PowerPAK® ChipFet Single	1765 pF	2.5 V	MOSFET (Metal Oxide)	-16 V	20 V	20 nC

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