Specification	SISS61DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	30.9 A
Current - Continuous Drain (Id) (Tc)	111.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	231 nC
Input Capacitance (Ciss) (Max)	8740 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8S
Package Name	PowerPAK® 1212-8S
Power Dissipation (Max)	65.8 W, 5 W
Rds On (Max)	3.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	900 mV

SISS61 Series

Part	Vgs(th) (Max)	FET Type	Vgs (Max)	Rds On (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)
Vishay Dale SISS61DN-T1-GE3	900 mV	P-Channel	8 V	3.5 mOhm	Surface Mount	20 V	111.9 A	30.9 A	231 nC	PowerPAK® 1212-8S	-55 °C	150 °C	PowerPAK® 1212-8S	MOSFET (Metal Oxide)	4.5 V	1.8 V	5 W 65.8 W	8740 pF

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