Specification	IR2183S

Channel Type	Independent
Current - Peak Output (Sink)	2.3 A
Current - Peak Output (Source)	1.9 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	20 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting, Non-Inverting
Logic Voltage - VIH	2.7 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	40 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2183 Series

Part	Gate Type	Input Type	Logic Voltage - VIL	Logic Voltage - VIH	Rise Time (Typ)	Fall Time (Typ)	Gate Channel	Package Length	Package Name	Package Width	High Side Voltage - Max (Bootstrap)	Operating Temperature (Min)	Operating Temperature (Max)	Channel Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Driven Configuration	Mounting Type	Number of Drivers	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)
INFINEON IR2183S	IGBT MOSFET N-Channel MOSFET	Inverting Non-Inverting	0.8 V	2.7 V	40 ns	20 ns	N-Channel	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	10 VDC	20 V
INFINEON IR2183	IGBT MOSFET N-Channel MOSFET	Inverting Non-Inverting	0.8 V	2.7 V	40 ns	20 ns	N-Channel	0.3 in	8-DIP 8-PDIP	7.62 mm	600 V	-40 °C	150 °C	Independent	1.9 A	2.3 A	Half-Bridge	Through Hole	2	10 VDC	20 V
INFINEON IR2183STR	IGBT MOSFET N-Channel MOSFET	Inverting Non-Inverting	0.8 V	2.7 V	40 ns	20 ns	N-Channel	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	10 VDC	20 V
INFINEON IR2183PBF	IGBT MOSFET N-Channel MOSFET	Inverting Non-Inverting	0.8 V	2.7 V	40 ns	20 ns	N-Channel	0.3 in	8-DIP 8-PDIP	7.62 mm	600 V	-40 °C	150 °C	Independent	1.9 A	2.3 A	Half-Bridge	Through Hole	2	10 VDC	20 V
INFINEON IR2183SPBF	IGBT MOSFET N-Channel MOSFET	Inverting Non-Inverting	0.8 V	2.7 V	40 ns	20 ns	N-Channel	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	10 VDC	20 V
INFINEON IR2183STRPBF	IGBT MOSFET N-Channel MOSFET	Inverting Non-Inverting	0.8 V	2.7 V	40 ns	20 ns	N-Channel	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	10 VDC	20 V

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IR2183S | Datasheet