1N4385 BK PBFREE

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DO41

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DO41

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1N4385 BK PBFREE	1N4385 Series

Current - Average Rectified (Io)	1 A	1 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	200 C	200 C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	10 µs	10 µs
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	DO-41	DO-41
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V	1.1 V

DIODE GEN PURP 600V 1A DO41

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Speed
Central Semiconductor Corp 1N4385 BK TIN/LEAD	600 V	DO-41	Standard	Axial, DO-204AL, DO-41	200 C	-65 C	10 µs	1.1 V	1 A	10 µA	Through Hole	Standard Recovery >500ns	200 mA
Central Semiconductor Corp 1N4385 BK PBFREE	600 V	DO-41	Standard	Axial, DO-204AL, DO-41	200 C	-65 C	10 µs	1.1 V	1 A	10 µA	Through Hole	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 1A Through Hole DO-41

Technical documentation and resources

No documents available