Description
General part information
AIDW30 Series
The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermal characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in the 650V voltage class. Product Validation"Qualified for Automotive Applications. Product Validation according to AEC-Q100/101"
Technical Specifications
Parameters and characteristics for this part
| Specification | AIDW30S65C5XKSA1 |
|---|---|
| Capacitance | 860 pF |
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage | 120 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3-41 |
| Qualification | AEC-Q100, 101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
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