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Description

General part information

STA434 Series

Bipolar (BJT) Transistor Array 2 NPN, 2 PNP Darlington (H-Bridge) 60V 4A 4W Through Hole 10-SIP

Technical Specifications

Parameters and characteristics for this part

SpecificationSTA434A
Current - Collector (Ic) (Max)4 A
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)1000
Mounting TypeThrough Hole
NPN Count2
Operating Temperature150 °C
Package / Case10-SIP
Package Name10-SIP
PNP Count2
Power - Max4 VA
Transistor ConfigurationDarlington, H-Bridge
Transistor TypePNP, NPN
Vce Saturation (Max)2 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

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Documents

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