Specification	IPD035N06L3GATMA1

Current - Continuous Drain (Id) (Tc)	90 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	79 nC
Input Capacitance (Ciss) (Max)	13000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	167 W
Rds On (Max)	3.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

IPD035N Series

Part	FET Type	Package Name	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package / Case	Mounting Type
INFINEON IPD035N06L3GATMA1	N-Channel	PG-TO252-3	MOSFET (Metal Oxide)	167 W	13000 pF	20 V	3.5 mOhm	60 V	-55 °C	175 °C	10 V	4.5 V	79 nC	90 A	2.2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount

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