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Trans MOSFET N-CH 40V 100A 4-Pin LFPAK-56 T/R

PSMN1R7-25YLDX

Active
Nexperia USA Inc.

N-CHANNEL 25 V, 1.75 MOHM, 200 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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Trans MOSFET N-CH 40V 100A 4-Pin LFPAK-56 T/R

PSMN1R7-25YLDX

Active
Nexperia USA Inc.

N-CHANNEL 25 V, 1.75 MOHM, 200 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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Description

General part information

PSMN1R7 Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN1R7-25YLDX
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Max)46.7 nC
Input Capacitance (Ciss) (Max)3415 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-669, SC-100
Package NameLFPAK56, Power-SO8
Power Dissipation (Max)135 W
Rds On (Max)1.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

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CAD

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