Specification	SIA456DJ-T3-GE3

Current - Continuous Drain (Id) (Ta)	1.1 A
Current - Continuous Drain (Id) (Tc)	2.6 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	14.5 nC
Input Capacitance (Ciss) (Max)	350 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max)	1.38 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	1.4 V

SIA456 Series

Part	Vgs (Max)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SIA456DJ-T1-GE3	16 V	PowerPAK® SC-70-6	4.5 V	1.8 V	Surface Mount	2.6 A	1.38 Ohm	PowerPAK® SC-70-6	N-Channel	200 V	1.4 V	350 pF	14.5 nC	3.5 W 19 W	MOSFET (Metal Oxide)	-55 °C	150 °C
Vishay Dale SIA456DJ-T3-GE3	16 V	PowerPAK® SC-70-6	4.5 V	1.8 V	Surface Mount	2.6 A	1.38 Ohm	PowerPAK® SC-70-6	N-Channel	200 V	1.4 V	350 pF	14.5 nC	3.5 W 19 W	MOSFET (Metal Oxide)	-55 °C	150 °C	1.1 A

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