IXFH60N20

Obsolete

LITTELFUSE

MOSFETS 60 AMPS 200V 0.033 RDS

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IXFH60N20

Obsolete

LITTELFUSE

MOSFETS 60 AMPS 200V 0.033 RDS

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFH60 Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH60N20

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	155 nC
Input Capacitance (Ciss) (Max)	5200 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AD (IXFH)
Power Dissipation (Max)	300 W
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IXFH60 Series

DiscMSFT NChUltraJnctn X2Class TO-247AD

Part	Gate Charge (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Package / Case	Vgs (Max)	Package Name	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)
LITTELFUSE IXFH60N25Q	180 nC	Through Hole	MOSFET (Metal Oxide)	60 A	4 V	N-Channel	250 V	-55 °C	150 °C	10 V	47 mOhm	TO-247-3	20 V	TO-247AD (IXFH)	360 W	5100 pF
LITTELFUSE IXFH60N50P3	96 nC	Through Hole	MOSFET (Metal Oxide)	60 A	5 V	N-Channel	500 V	-55 °C	150 °C	10 V	100 mOhm	TO-247-3	30 V	TO-247AD (IXFH)	1040 W	6250 pF
LITTELFUSE IXFH60N65X2-4	108 nC	Through Hole	MOSFET (Metal Oxide)	60 A	5 V	N-Channel	650 V	-55 °C	150 °C	10 V	52 mOhm	TO-247-4	30 V	TO-247-4L	780 W	6300 pF
LITTELFUSE IXFH60N65X2	107 nC	Through Hole	MOSFET (Metal Oxide)	60 A	5.5 V	N-Channel	650 V	-55 °C	150 °C	10 V	52 mOhm	TO-247-3	30 V	TO-247 (IXTH)	780 W	6180 pF
LITTELFUSE IXFH60N50P3	96 nC	Through Hole	MOSFET (Metal Oxide)	60 A	5 V	N-Channel	500 V	-55 °C	150 °C	10 V	100 mOhm	TO-247-3	30 V	TO-247AD (IXFH)	1040 W	6250 pF
LITTELFUSE IXFH60N65X2-4	108 nC	Through Hole	MOSFET (Metal Oxide)	60 A	5 V	N-Channel	650 V	-55 °C	150 °C	10 V	52 mOhm	TO-247-4	30 V	TO-247-4L	780 W	6300 pF
LITTELFUSE IXFH60N20	155 nC	Through Hole	MOSFET (Metal Oxide)	60 A	4 V	N-Channel	200 V	-55 °C	150 °C	10 V	33 mOhm	TO-247-3	20 V	TO-247AD (IXFH)	300 W	5200 pF
LITTELFUSE IXFH60N60X	143 nC	Through Hole	MOSFET (Metal Oxide)	60 A	4.5 V	N-Channel	600 V	-55 °C	150 °C	10 V	55 mOhm	TO-247-3	30 V	TO-247 (IXTH)	890 W	5800 pF
LITTELFUSE IXFH60N65X2	107 nC	Through Hole	MOSFET (Metal Oxide)	60 A	5.5 V	N-Channel	650 V	-55 °C	150 °C	10 V	52 mOhm	TO-247-3	30 V	TO-247 (IXTH)	780 W	6180 pF

Pricing

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CAD

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