IRG4PH50S-EPBF

Obsolete

Infineon Technologies

IGBT 1200V 57A TO247AD

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT 1200V 57A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IRG4PH50S-EPBF

Current - Collector (Ic) (Max) [Max]	57 A
Current - Collector Pulsed (Icm)	114 A
Gate Charge	167 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	200 W
Supplier Device Package	TO-247AD
Switching Energy	1.8 mJ, 19.6 mJ
Td (on/off) @ 25°C	32 ns, 845 ns
Test Condition	15 V, 960 V, 5 Ohm, 33 A
Vce(on) (Max) @ Vge, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Power - Max [Max]	Test Condition	Current - Collector Pulsed (Icm)	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Mounting Type	Td (on/off) @ 25°C	Switching Energy	Package / Case	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Reverse Recovery Time (trr)
Infineon Technologies IRG4PH50S-EPBF	1200 V	57 A	-55 °C	150 °C	167 nC	200 W	5 Ohm 15 V 33 A 960 V	114 A	TO-247AD	1.7 V	Through Hole	32 ns 845 ns	1.8 mJ 19.6 mJ	TO-247-3
Infineon Technologies IRG4PH50KPBF	1200 V	45 A	-55 °C	150 °C		200 W	5 Ohm 15 V 24 A 960 V	90 A	TO-247AC	3.5 V	Through Hole		1.21 mJ 2.25 mJ	TO-247-3	36 ns	200 ns
Infineon Technologies IRG4PH50UDPBF	1200 V	45 A	-55 °C	150 °C	160 nC	200 W	5 Ohm 15 V 24 A 800 V	180 A	TO-247AC	3.7 V	Through Hole		1.5 mJ 2.1 mJ	TO-247-3	47 ns	110 ns	90 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 1200 V 57 A 200 W Through Hole TO-247AD

Technical documentation and resources

No documents available