IPD50N06S4L12ATMA2

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IPD50N06S4L-12 IS AN AUTOMOTIVE MOSFET OFFERING 60V, N-CH, 12 MΩ MAX, DPAK, OPTIMOS™-T2, AEC Q101 QUALIFIED, 175°C OPERATING TEMPERATURE, ROHS COMPLIANT.

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IPD50N06S4L12ATMA2

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INFINEON

IPD50N06S4L-12 IS AN AUTOMOTIVE MOSFET OFFERING 60V, N-CH, 12 MΩ MAX, DPAK, OPTIMOS™-T2, AEC Q101 QUALIFIED, 175°C OPERATING TEMPERATURE, ROHS COMPLIANT.

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Description Specifications Series Pricing CAD Documents

Description

General part information

IPD50 Series

N-Channel 60 V 50A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11

Technical Specifications

Parameters and characteristics for this part

Specification	IPD50N06S4L12ATMA2

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2890 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3-11
Power Dissipation (Max)	50 W
Qualification	AEC-Q101
Rds On (Max)	12 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.2 V

IPD50 Series

Part	Grade	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Vgs(th) (Max)	FET Type	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Mounting Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Qualification	Rds On (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) Negative	Vgs (Max) Positive
INFINEON IPD50N06S4L12ATMA2	Automotive	50 W	50 A	PG-TO252-3-11	2.2 V	N-Channel	MOSFET (Metal Oxide)	10 V	4.5 V	16 V	Surface Mount	40 nC	-55 °C	175 °C	2890 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	12 mOhm	60 V
INFINEON IPD50N04S408ATMA1	Automotive	46 W	50 A	PG-TO252-3-313	4 V	N-Channel	MOSFET (Metal Oxide)			20 V	Surface Mount	22.4 nC	-55 °C	175 °C	1780 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	7.9 mOhm	40 V	10 V
INFINEON IPD50N06S2L13ATMA1	Automotive	136 W	50 A	PG-TO252-3-11	2 V	N-Channel	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	Surface Mount	69 nC	-55 °C	175 °C	1800 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	12.7 mOhm	55 V
INFINEON IPD50P04P413AUMA2	Automotive	58 W	50 A	PG-TO252-3-313	4 V	P-Channel	MOSFET (Metal Oxide)			20 V	Surface Mount	51 nC	-55 °C	175 °C	3670 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	12.6 mOhm	40 V	10 V
INFINEON IPD50N06S409ATMA1	Automotive	71 W	50 A	PG-TO252-3-11	4 V	N-Channel	MOSFET (Metal Oxide)			20 V	Surface Mount	47 nC	-55 °C	175 °C	3785 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	9 mOhm	60 V	10 V
INFINEON IPD50N10S3L16ATMA1	Automotive	100 W	50 A	PG-TO252-3-11	2.4 V	N-Channel	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	Surface Mount	64 nC	-55 °C	175 °C	4180 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	15 mOhm	100 V
INFINEON IPD50P04P4L11ATMA1	Automotive	58 W	50 A	PG-TO252-3-313	2.2 V	P-Channel	MOSFET (Metal Oxide)	10 V	4.5 V	16 V	Surface Mount	59 nC	-55 °C	155 °C 175 °C	3900 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	10.6 mOhm	40 V		-16 V	5 V
INFINEON IPD50P03P4L11ATMA2	Automotive	58 W	50 A	PG-TO252-3-11	2 V	P-Channel	MOSFET (Metal Oxide)				Surface Mount	55 nC	-55 °C	175 °C	3770 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	10.5 mOhm	30 V		-16 V	5 V
INFINEON IPD50N08S413ATMA1	Automotive	72 W	50 A	PG-TO252-3-313	4 V	N-Channel	MOSFET (Metal Oxide)			20 V	Surface Mount	30 nC	-55 °C	175 °C	1711 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	13.2 mOhm	80 V	10 V
INFINEON IPD50N06S409ATMA2	Automotive	71 W	50 A	PG-TO252-3-11	4 V	N-Channel	MOSFET (Metal Oxide)			20 V	Surface Mount	47.1 nC	-55 °C	175 °C	3785 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	9 mOhm	60 V	10 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IPD50N06S4L12ATMA2 | Datasheet

Customer Guideline for FIT Report

Infineon-MA001913388-MaterialContentSheet-v01_00-EN