BAT1503WE6327HTSA1
ActiveInfineon Technologies
DIODE SCHOTTKY 4V 100MW SOD323-2
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BAT1503WE6327HTSA1
ActiveInfineon Technologies
DIODE SCHOTTKY 4V 100MW SOD323-2
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BAT1503WE6327HTSA1 |
|---|---|
| Current - Max [Max] | 110 mA |
| Diode Type | Schottky - Single |
| Operating Temperature | 150 °C |
| Package / Case | SOD-323, SC-76 |
| Power Dissipation (Max) [Max] | 100 mW |
| Voltage - Peak Reverse (Max) [Max] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.79 | |
| 10 | $ 0.49 | |||
| 100 | $ 0.32 | |||
| 500 | $ 0.24 | |||
| 1000 | $ 0.22 | |||
| Digi-Reel® | 1 | $ 0.79 | ||
| 10 | $ 0.49 | |||
| 100 | $ 0.32 | |||
| 500 | $ 0.24 | |||
| 1000 | $ 0.22 | |||
| Tape & Reel (TR) | 3000 | $ 0.19 | ||
| 6000 | $ 0.17 | |||
| 9000 | $ 0.16 | |||
| 15000 | $ 0.16 | |||
| 21000 | $ 0.15 | |||
| 30000 | $ 0.14 | |||
Description
General part information
BAT1503 Series
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Documents
Technical documentation and resources