Specification	SIZ988DT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	23.1 nC, 10.5 nC
Input Capacitance (Ciss) (Max)	1000 pF, 2425 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Name	8-PowerPair®
Power - Max (Value 1)	20.2 W
Power - Max (Value 2)	40 W
Rds On (Max)	4.1 mOhm, 7.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.2 V, 2.4 V

SIZ Series

Part	Rds On (Max)	Channel Count	Configuration	Configuration - Features	Mounting Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta) (2)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc) (2)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Package / Case	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package Name	Package Length	Package Width	Technology	Power - Max (Ta)	Power - Max (Tc)	Power - Max (Value 1)	Power - Max (Value 2)
Vishay Dale SIZ200DT-T1-GE3	5.5 mOhm 5.8 mOhm	2	N-Channel	Dual	Surface Mount	28 nC 30 nC	-55 °C	150 °C	22 A	22 A	60 A	61 A	1510 pF	8-PowerWDFN	2.4 V	30 V	8-PowerPair®	3.3 mm	3.3 mm	MOSFET (Metal Oxide)	4.3 W	33 W
Vishay Dale SIZ346DT-T1-GE3	11.5 mOhm 28.5 mOhm	2	N-Channel	Dual	Surface Mount	5 nC	-55 °C	150 °C			30 A	17 A	325 pF 650 pF	8-PowerWDFN	2.2 V 2.4 V	30 V	8-Power33	3 mm	3 mm	MOSFET (Metal Oxide)			16 W	16.7 W
Vishay Dale SIZ988DT-T1-GE3	4.1 mOhm 7.5 mOhm	2	N-Channel	Dual	Surface Mount	10.5 nC 23.1 nC	-55 °C	150 °C				40 A	1000 pF 2425 pF	8-PowerWDFN	2.2 V 2.4 V	30 V	8-PowerPair®			MOSFET (Metal Oxide)			20.2 W	40 W

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