Specification	SIA466EDJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	25 A, 25 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	620 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19.2 W
Rds On (Max)	9.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SIA466 Series

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Technology	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Package Name	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIA466EDJ-T1-GE3	3.5 W 19.2 W	620 pF	MOSFET (Metal Oxide)	9.5 mOhm	10 V	4.5 V	Surface Mount	2.5 V	25 A 25 A	20 nC	PowerPAK® SC-70-6	PowerPAK® SC-70-6	20 V	20 V	N-Channel	-55 °C	150 °C

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