SSM3K15AFS,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA SSM

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA SSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K15AFS,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs [Max]	3.6 Ohm
Supplier Device Package	SSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

Part	Package / Case	Power Dissipation (Max)	Vgs (Max)	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM3K15AFS,LF	SC-75 SOT-416	100 mW	20 V	N-Channel	SSM	30 V	150 °C	13.5 pF	100 mA	4 V	2.5 V	Surface Mount	3.6 Ohm	MOSFET (Metal Oxide)	1.5 V

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General part information

N-Channel 30 V 100mA (Ta) 100mW (Ta) Surface Mount SSM

Technical documentation and resources